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Title: Microstructural characterization of as-cast Co-Si alloys

This work presents results of microstructural characterization of as-cast Co-Si alloys. The alloys of different compositions were prepared by arc melting Co (min. 99.97%) and Si (min. 99.99%) under argon atmosphere in a water-cooled copper crucible with a nonconsumable tungsten electrode and titanium getter. All samples were characterized by scanning electron microscopy (SEM) using back-scattered electron (BSE) mode and X-ray diffraction (XRD). A good conformity between the currently accepted Co-Si phase diagram and the experimental results from this work was verified. No indication of the {beta}Co{sub 2}Si was observed in the as-cast microstructures. As in previous investigations, the Co{sub 3}Si phase has not been observed in the samples at room temperature; however, microstructural evidence suggests its stability at high temperature.
Authors:
 [1] ;  [2] ;  [2] ;  [3]
  1. Faculdade de Engenharia Quimica de Lorena (FAENQUIL), Departamento de Engenharia de Materiais (DEMAR), Polo Urbo Industrial, Gleba AI-6, C.P. 116, 12600-970 Lorena-Sao Paulo (Brazil). E-mail: ismenia@phase.faenquil.br
  2. Faculdade de Engenharia Quimica de Lorena (FAENQUIL), Departamento de Engenharia de Materiais (DEMAR), Polo Urbo Industrial, Gleba AI-6, C.P. 116, 12600-970 Lorena-Sao Paulo (Brazil)
  3. Pontificia Universidade Catolica do Rio de Janeiro-DCMM-PUC-Rio, Rua Marques de Sao Vicente, 225-Gavea-Rio de Janeiro (Brazil)
Publication Date:
OSTI Identifier:
20833186
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Characterization; Journal Volume: 56; Journal Issue: 1; Other Information: DOI: 10.1016/j.matchar.2005.10.001; PII: S1044-5803(05)00203-2; Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARGON; COBALT ALLOYS; COBALT SILICIDES; MELTING; MICROSTRUCTURE; PHASE DIAGRAMS; SCANNING ELECTRON MICROSCOPY; SILICON ALLOYS; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION