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Title: Activity in SRL Nagoya Coated Conductor Center for YBCO Coated Conductor by IBAD+ PLD Method -Long, high Ic conductor and a new bamboo-like nanostructure for efficient pinning

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.2192415· OSTI ID:20800186
; ; ; ; ; ; ; ; ;  [1]; ;  [2];  [3]
  1. Superconductivity Research Laboratory, ISTEC, 2-4-1 Mutsuno, Atsuta-ku, Nagoya, 456-8587 (Japan)
  2. Materials R and D Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587 (Japan)
  3. Superconductivity Research Laboratory, ISTEC, 1-10-13 Shinonome, Koto-ku, Tokyo 135-0062 (Japan)

In SRL-Nagoya Coated Conductor Center (NCCC), long buffered substrate tapes and YBCO coated conductors have been successfully fabricated by using ion-beam assisted deposition (IBAD) and pulsed laser deposition (PLD) methods. For the buffered tape, the PLD-CeO2 method, what we call the 'Self-Epitaxial' method, realized the high degree of in-plane texturing around 4 degrees along the length of 220 m. For YBCO deposition, we have recently introduced new reel-to-reel PLD equipment with a multi-plume and multi-turn deposition system (MPMT PLD). This system succeeded in fabricating a long coated conductor with a high critical current, Ic, of 245 A and length of 212 m. Ic xL (length) reached the world record of 51940 Am. Furthermore, the introduction of artificial pinning center and RE 123 materials were also studied for improving flux pinning and enhancing Ic. A new columnar structure of the 'bamboo structure' (BaZrO3/Y123 layer-stacked structure) was found in Y123+YSZ sample. This columnar structure and the stacking faults in Gd123 were found to be effective for enhancing pinning properties. Using these techniques, we have succeeded in increasing Ic at 0 T to 480 A/cm and also enhancing Ic in a magnetic field.

OSTI ID:
20800186
Journal Information:
AIP Conference Proceedings, Vol. 824, Issue 1; Conference: Cryogenic engineering conference, Keystone, CO (United States), 29 Aug - 2 Sep 2005; Other Information: DOI: 10.1063/1.2192415; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English