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Title: Strong coupling of light with A and B excitons in GaN microcavities grown on silicon

We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon (111). At low temperature, the strong coupling of both the A and B excitonic features of GaN with the cavity mode is clearly resolved in the microcavity. At room temperature a Rabi energy of 50 meV is observed and well reproduced using transfer-matrix reflectivity calculations describing the interaction of both the A and B excitonic states with the photonic mode.
Authors:
; ; ; ; ; ; ;  [1] ;  [2]
  1. CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, Valbonne 06560 (France)
  2. (France)
Publication Date:
OSTI Identifier:
20787837
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 73; Journal Issue: 3; Other Information: DOI: 10.1103/PhysRevB.73.033304; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; COUPLING; EPITAXY; EXCITONS; GALLIUM NITRIDES; REFLECTIVITY; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DEPENDENCE; VISIBLE RADIATION