Growth of silicon bump induced by swift heavy ion at the silicon oxide-silicon interface

Journal Article · Mon Jan 23 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2166476· OSTI ID:20778576

Carlotti, J -F; Touboul, A D; Ramonda, M; Caussanel, M; Guasch, C; Bonnet, J; Gasiot, J ^[1]

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1. CEM2, UMR-CNRS 5507, cc083, Universite de Montpellier 2, 34095 Montpellier cedex 5 (France)

Thin silicon oxide layers on silicon substrates are investigated by scanning probe microscopy before and after irradiation with 210 MeV Au+ ions. After irradiation and complete chemical etching of the silicon oxide layer, silicon bumps grown on the silicon surface are observed. It is shown that each impinging ion induces one silicon bump at the interface. This observation is consistent with the thermal spike theory. Ion energy loss is transferred to the oxide and induces local melting. Silicon-bump formation is favored when the oxide and oxide-silicon interface are silicon rich.

• OSTI ID: 20778576
• Journal Information: Applied Physics Letters, Vol. 88, Issue 4; Other Information: DOI: 10.1063/1.2166476; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
CRYSTAL GROWTH
ETCHING
GOLD IONS
HEAVY IONS
INTERFACES
ION BEAMS
IRRADIATION
LAYERS
MELTING
MEV RANGE 100-1000
MICROSCOPY
PROBES
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SUBSTRATES
THERMAL SPIKES