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Title: Attenuation of hydrogen radicals traveling under flowing gas conditions through tubes of different materials

Journal Article · · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
DOI:https://doi.org/10.1116/1.2191862· OSTI ID:20777183
;  [1]
  1. Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309 (United States)

Hydrogen radical concentrations traveling under flowing gas conditions through tubes of different materials were measured using a dual thermocouple probe. The source of the hydrogen radicals was a toroidal radio frequency plasma source operating at 2.0 and 3.3 kW for H{sub 2} pressures of 250 and 500 mTorr, respectively. The dual thermocouple probe was comprised of exposed and covered Pt/Pt13%Rh thermocouples. Hydrogen radicals recombined efficiently on the exposed thermocouple and the energy of formation of H{sub 2} heated the thermocouple. The second thermocouple was covered by glass and was heated primarily by the ambient gas. The dual thermocouple probe was translated and measured temperatures at different distances from the hydrogen radical source. These temperature measurements were conducted at H{sub 2} flow rates of 35 and 75 SCCM (SCCM denotes cubic centimeter per minute at STP) inside cylindrical tubes made of stainless steel, aluminum, quartz, and Pyrex. The hydrogen radical concentrations were obtained from the temperatures of the exposed and covered thermocouples. The hydrogen concentration decreased versus distance from the plasma source. After correcting for the H{sub 2} gas flow using a reference frame transformation, the hydrogen radical concentration profiles yielded the atomic hydrogen recombination coefficient, {gamma}, for the four materials. The methodology of measuring the hydrogen radical concentrations, the analysis of the results under flowing gas conditions, and the determination of the atomic hydrogen recombination coefficients for various materials will help facilitate the use of hydrogen radicals for thin film growth processes.

OSTI ID:
20777183
Journal Information:
Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 24, Issue 3; Other Information: DOI: 10.1116/1.2191862; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
Country of Publication:
United States
Language:
English