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Title: RF Power Coupling And Plasma Transport Effects In Magnetized Capacitive Discharges

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.2098528· OSTI ID:20726361
;  [1];  [2]
  1. Oak Ridge National Laboratory, Oak Ridge, TN (United States)
  2. Applied Materials, Santa Clara, CA (United States)

Static magnetic fields have been used to expand the operational envelope, increase power efficiency, and control processing parameters in capacitively-coupled radio frequency plasma discharges. A simple physical model has been developed to investigate the roles of the plasma dielectric tensor and plasma transport in determining the ion flux spatial profile along a wafer surface over a range of plasma density, neutral pressure and magnetic field strength and orientation. The model has been incorporated into the MORRFIC code and calculations have been made for a capacitively-coupled 300-mm etch tool operating at frequencies greater than 100 MHz. A Lieberman sheath model show effects that can occur when the sheath voltages are made to be consistent with the driven RF fields in the collisional unmagnetized limit; other sheath models will also be considered. A two-dimensional transport model accounts for magnetized cross-field diffusion. Results isolate magnetic field effects that are caused by modification of the plasma dielectric from transport effects that are caused by the reduced electron mobility perpendicular to the magnetic field.

OSTI ID:
20726361
Journal Information:
AIP Conference Proceedings, Vol. 787, Issue 1; Other Information: DOI: 10.1063/1.2098528; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English