Cubic boron nitride thin film growth by boron and nitrogen ion implantation
- 2. Physikalisches Institut, Universitaet Goettingen, Friedrich-Hund-Platz 1, D-37077 Goettingen (Germany)
Cubic boron nitride (c-BN) thin films were deposited on silicon substrates using mass separated ion beam deposition (MSIBD). In order to investigate the influence of the ion energy on the growth of c-BN films, {sup 11}B{sup +} and {sup 14}N{sup +} ions were implanted into c-BN with ion energies ranging from 5 keV to 43 keV and substrate temperatures (T{sub S}) from room temperature (RT) to 250 deg. C. A systematic study on the interplay of E{sub ion} and T{sub S} has revealed a characteristic energy-dependent temperature threshold for c-BN growth. This behavior is explained by dynamic annealing of defects caused by a penetrating ion in a collision cascade. In this picture, the suppression of defect accumulation that is crucial for maintaining cubic phase formation is attributed to temperature-driven back diffusion and subsequent annihilation of B and N interstitial recoils. The model is confirmed by analyzing the depth profile of implanted, isotopically pure {sup 10}B, and its application for both c-BN nucleation and growth is discussed.
- OSTI ID:
- 20719291
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 72, Issue 5; Other Information: DOI: 10.1103/PhysRevB.72.054126; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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