skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Optical Flatness Metrology for 300 mm Silicon Wafers

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.2063025· OSTI ID:20719275
;  [1];  [2]
  1. National Institute of Standards and Technology, Manufacturing Engineering Laboratory, Gaithersburg, MD 20899-8223 (United States)
  2. WaveFront Sciences Inc., Albuquerque, NM 87123 (United States)

The National Institute of Standards and Technology (NIST) is developing two interferometric methods for measuring the thickness, thickness variation, and flatness of free-standing and chucked silicon wafers with diameters up to 300 mm. The 'eXtremely accurate CALIBration InterferometeR' (XCALIBIR) is a precision phase measuring interferometer with an operating wavelength of 633 nm and a test beam of 300 mm diameter. XCALIBIR is used to evaluate the flatness of chucked wafers. NIST's Infrared Interferometer (IR2) is a phase measuring interferometer that operates at 1.55 {mu}m and is used to measure the thickness variation of free-standing 300 mm silicon wafers.

OSTI ID:
20719275
Journal Information:
AIP Conference Proceedings, Vol. 788, Issue 1; Conference: 2005 international conference on characterization and metrology for ULSI technology, Richardson, TX (United States), 15-18 Mar 2005; Other Information: DOI: 10.1063/1.2063025; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English

Similar Records

Direct Simulation Monte Carlo (DSMC) of rarefied gas flow during etching of large diameter (300-mm) wafers
Journal Article · Thu Feb 01 00:00:00 EST 1996 · IEEE Transactions on Plasma Science · OSTI ID:20719275

Metrology issues for processing of 300 mm wafers
Journal Article · Tue Nov 24 00:00:00 EST 1998 · AIP Conference Proceedings · OSTI ID:20719275

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate
Journal Article · Mon Aug 29 00:00:00 EDT 2016 · Applied Physics Letters · OSTI ID:20719275