Interaction of defects and H in proton-irradiated GaN(Mg, H)

Myers, S M; Seager, C H

doi:10.1063/1.1883309

Title: Interaction of defects and H in proton-irradiated GaN(Mg, H)

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Abstract

Magnesium-doped, p-type GaN containing H was irradiated with MeV protons at room temperature and then annealed at a succession of increasing temperatures, with the behavior of defects and H in the material being followed through infrared absorption spectroscopy, nuclear-reaction analysis of the H, and photoluminescence. The results support the annihilation of Ga Frenkel pairs near room temperature, leaving the N interstitial and N vacancy to influence the elevated-temperature behavior. Multiple changes are observed with increasing temperature, ending with thermal release of the H above 700 deg. C. These effects are interpreted in terms of a succession of complexes involving Mg, the point defects, and H.

Authors:

Myers, S M; Seager, C H ^[1]

Sandia National Laboratories, Albuquerque, New Mexico 87185-1056 (United States)

Publication Date:: Sun May 01 00:00:00 EDT 2005

OSTI Identifier:: 20713914

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 97; Journal Issue: 9; Other Information: DOI: 10.1063/1.1883309; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ANNEALING; ANNIHILATION; DOPED MATERIALS; EPITAXY; FRENKEL DEFECTS; GALLIUM NITRIDES; HYDROGEN; IMPURITIES; INTERSTITIALS; IRRADIATION; LAYERS; MAGNESIUM; MEV RANGE; NUCLEAR REACTION ANALYSIS; PHOTOLUMINESCENCE; PROTON BEAMS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K

Citation Formats


                    Myers, S M, and Seager, C H. Interaction of defects and H in proton-irradiated GaN(Mg, H).  United States: N. p., 2005. 
        Web.  doi:10.1063/1.1883309.

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                    Myers, S M, & Seager, C H. Interaction of defects and H in proton-irradiated GaN(Mg, H).  United States.  https://doi.org/10.1063/1.1883309

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                    Myers, S M, and Seager, C H. 2005.  
        "Interaction of defects and H in proton-irradiated GaN(Mg, H)".  United States.  https://doi.org/10.1063/1.1883309.

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@article{osti_20713914,

  title        = {Interaction of defects and H in proton-irradiated GaN(Mg, H)},

  author       = {Myers, S M and Seager, C H},

  abstractNote = {Magnesium-doped, p-type GaN containing H was irradiated with MeV protons at room temperature and then annealed at a succession of increasing temperatures, with the behavior of defects and H in the material being followed through infrared absorption spectroscopy, nuclear-reaction analysis of the H, and photoluminescence. The results support the annihilation of Ga Frenkel pairs near room temperature, leaving the N interstitial and N vacancy to influence the elevated-temperature behavior. Multiple changes are observed with increasing temperature, ending with thermal release of the H above 700 deg. C. These effects are interpreted in terms of a succession of complexes involving Mg, the point defects, and H.},

  doi          = {10.1063/1.1883309},

  url          = {https://www.osti.gov/biblio/20713914},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 9,

  volume       = 97,

  place        = {United States},

  year         = {Sun May 01 00:00:00 EDT 2005},

  month        = {Sun May 01 00:00:00 EDT 2005}

}

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