Evolution of magnetic anisotropy and spin-reorientation transition in Fe films grown on GaAs(113)A substrates by molecular-beam epitaxy
- Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, Berlin 10117 (Germany)
The magnetic properties of Fe films grown on GaAs(113)A substrates by molecular-beam epitaxy are studied using superconducting quantum interference device magnetometry for a wide range of thickness varying from 3.5 monolayers (MLs) to 100 nm (714 MLs). The first signature of ferromagnetism is found at a nominal coverage of about 4 MLs, attributed to a percolation phenomenon, similar to Fe on GaAs(001). The magnetic anisotropy of all samples is found to be a combination of varying strengths of an in-plane uniaxial magnetic anisotropy (UMA) and a four-fold magnetic anisotropy. Samples of thickness d{sub Fe}{<=}50 MLs exhibit a dominating UMA with the easy and hard axes along [332] and [110], respectively, whereas samples of thickness d{sub Fe}{>=}70 MLs exhibit a dominating four-fold magnetic anisotropy with the easy axes along the in-plane <031> directions. The reorientation of the easy axis from [332] to the in-plane <031> axes is found to take place between 50 and 70 MLs, the same thickness range where the relaxation of the layer starts. The effective uniaxial magnetic anisotropy constant K{sub u}{sup eff} first increases with monolayer coverage up to about 10 MLs and then decreases with the increase in thickness. On the other hand, the effective four-fold anisotropy constant K{sub 1}{sup eff} first increases with monolayer coverage and then saturates close to the bulk value after about 20 MLs. From a comparison of our results with literature a common origin of UMA in Fe films on GaAs(001) and (113)A, i.e., the anisotropy of the bonding of Fe with As and Ga at the interface is anticipated.
- OSTI ID:
- 20711762
- Journal Information:
- Journal of Applied Physics, Vol. 97, Issue 12; Other Information: DOI: 10.1063/1.1929852; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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