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Title: Increase of island density via formation of secondary ordered islands on pit-patterned Si (001) substrates

Abstract

Site-controlled groups of Ge islands are grown on pit-patterned Si (001) substrates. By varying the deposited amount of Ge, we find that the growth starts with the formation of a single island at the pit bottom and then proceeds to the formation of a highly symmetric Ge island group around the pit top. A bimodal size distribution of dome-shaped islands at the bottom and at the top corners of the pits is observed. A growth mechanism is proposed to qualitatively explain these phenomena. Our experiments help to promote a further understanding of Ge island growth on patterned substrates.

Authors:
; ;  [1]
  1. Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, D-70569 Stuttgart (Germany)
Publication Date:
OSTI Identifier:
20709812
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 87; Journal Issue: 13; Other Information: DOI: 10.1063/1.2061870; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; GERMANIUM; MAGNETIC ISLANDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES

Citation Formats

Zhong, Z, Schmidt, O G, Bauer, G, and Institute for Semiconductor Physics, Johannes Kepler University, A-4040 Linz. Increase of island density via formation of secondary ordered islands on pit-patterned Si (001) substrates. United States: N. p., 2005. Web. doi:10.1063/1.2061870.
Zhong, Z, Schmidt, O G, Bauer, G, & Institute for Semiconductor Physics, Johannes Kepler University, A-4040 Linz. Increase of island density via formation of secondary ordered islands on pit-patterned Si (001) substrates. United States. https://doi.org/10.1063/1.2061870
Zhong, Z, Schmidt, O G, Bauer, G, and Institute for Semiconductor Physics, Johannes Kepler University, A-4040 Linz. 2005. "Increase of island density via formation of secondary ordered islands on pit-patterned Si (001) substrates". United States. https://doi.org/10.1063/1.2061870.
@article{osti_20709812,
title = {Increase of island density via formation of secondary ordered islands on pit-patterned Si (001) substrates},
author = {Zhong, Z and Schmidt, O G and Bauer, G and Institute for Semiconductor Physics, Johannes Kepler University, A-4040 Linz},
abstractNote = {Site-controlled groups of Ge islands are grown on pit-patterned Si (001) substrates. By varying the deposited amount of Ge, we find that the growth starts with the formation of a single island at the pit bottom and then proceeds to the formation of a highly symmetric Ge island group around the pit top. A bimodal size distribution of dome-shaped islands at the bottom and at the top corners of the pits is observed. A growth mechanism is proposed to qualitatively explain these phenomena. Our experiments help to promote a further understanding of Ge island growth on patterned substrates.},
doi = {10.1063/1.2061870},
url = {https://www.osti.gov/biblio/20709812}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 13,
volume = 87,
place = {United States},
year = {Mon Sep 26 00:00:00 EDT 2005},
month = {Mon Sep 26 00:00:00 EDT 2005}
}