Damage formation and annealing at low temperatures in ion implanted ZnO
- Instituto Tecnologico e Nuclear, Estrada Nacional 10, 2686-953 Sacavem, Portugal and CFNUL, Av. Prof. Gama Pinto, 1649-003 Lisbon (Portugal)
N, Ar, and Er ions were implanted into ZnO at 15 K within a large fluence range. The Rutherford backscattering technique in the channeling mode was used to study in situ the damage built-up in the Zn sublattice at 15 K. Several stages in the damage formation were observed. From the linear increase of the damage for low implantation fluences, an upper limit of the Zn displacement energy of 65 eV could be estimated for [0001] oriented ZnO. Annealing measurements below room temperature show a significant recovery of the lattice starting at temperatures between 80 and 130 K for a sample implanted with low Er fluence. Samples with higher damage levels do not reveal any damage recovery up to room temperature, pointing to the formation of stable defect complexes.
- OSTI ID:
- 20706451
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 19; Other Information: DOI: 10.1063/1.2126137; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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