III-nitrides on oxygen- and zinc-face ZnO substrates
- Georgia Institute of Technology, School of Electrical and Computer Engineering, Microelectronic Research Center, 791 Atlantic Drive, Atlanta, Georgia 30332-0269 (United States)
The characteristics of III-nitrides grown on zinc- and oxygen-face ZnO by plasma-assisted molecular beam epitaxy were investigated. The reflection high-energy electron diffraction pattern indicates formation of a cubic phase at the interface between III-nitride and both Zn- and O-face ZnO. The polarity indicates that Zn-face ZnO leads to a single polarity, while O-face ZnO forms mixed polarity of III-nitrides. Furthermore, by using a vicinal ZnO substrate, the terrace-step growth of GaN was realized with a reduction by two orders of magnitude in the dislocation-related etch pit density to {approx}10{sup 8} cm{sup -2}, while a dislocation density of {approx}10{sup 10} cm{sup -2} was obtained on the on-axis ZnO substrates.
- OSTI ID:
- 20706415
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 18; Other Information: DOI: 10.1063/1.2120912; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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