Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation
Abstract
We report a unique low-temperature growth method for epitaxial GaN on Si(111) substrates via a ZrB{sub 2}(0001) buffer layer. The method utilizes the decomposition of a single gas-source precursor (D{sub 2}GaN{sub 3}){sub 3} on the substrate surface to form GaN. The film growth process is further promoted by irradiation of ultraviolet light to enhance the growth rate and ordering of the film. The best epitaxial film quality is achieved at a growth temperature of 550 deg. C with a growth rate of 3 nm/min. The films exhibit intense photoluminescence emission at 10 K with a single peak at 3.48 eV, indicative of band-edge emission for a single-phase hexagonal GaN film. The growth process achieved in this study is compatible with low Si processing temperatures and also enables direct epitaxy of GaN on ZrB{sub 2} in contrast to conventional metalorganic chemical vapor deposition based approaches.
- Authors:
-
- Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States)
- Publication Date:
- OSTI Identifier:
- 20702595
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 87; Journal Issue: 7; Other Information: DOI: 10.1063/1.2012519; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; BUFFERS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DECOMPOSITION; EPITAXY; EV RANGE 01-10; EXCITATION; FILMS; GALLIUM NITRIDES; IRRADIATION; LAYERS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0400-1000 K; ULTRAVIOLET RADIATION; ZIRCONIUM BORIDES
Citation Formats
Trivedi, R A, Tolle, J, Chizmeshya, A V.G., Roucka, R, Ritter, Cole, Kouvetakis, J, Tsong, I S.T., and Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504. Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation. United States: N. p., 2005.
Web. doi:10.1063/1.2012519.
Trivedi, R A, Tolle, J, Chizmeshya, A V.G., Roucka, R, Ritter, Cole, Kouvetakis, J, Tsong, I S.T., & Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504. Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation. United States. https://doi.org/10.1063/1.2012519
Trivedi, R A, Tolle, J, Chizmeshya, A V.G., Roucka, R, Ritter, Cole, Kouvetakis, J, Tsong, I S.T., and Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504. 2005.
"Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation". United States. https://doi.org/10.1063/1.2012519.
@article{osti_20702595,
title = {Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation},
author = {Trivedi, R A and Tolle, J and Chizmeshya, A V.G. and Roucka, R and Ritter, Cole and Kouvetakis, J and Tsong, I S.T. and Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504},
abstractNote = {We report a unique low-temperature growth method for epitaxial GaN on Si(111) substrates via a ZrB{sub 2}(0001) buffer layer. The method utilizes the decomposition of a single gas-source precursor (D{sub 2}GaN{sub 3}){sub 3} on the substrate surface to form GaN. The film growth process is further promoted by irradiation of ultraviolet light to enhance the growth rate and ordering of the film. The best epitaxial film quality is achieved at a growth temperature of 550 deg. C with a growth rate of 3 nm/min. The films exhibit intense photoluminescence emission at 10 K with a single peak at 3.48 eV, indicative of band-edge emission for a single-phase hexagonal GaN film. The growth process achieved in this study is compatible with low Si processing temperatures and also enables direct epitaxy of GaN on ZrB{sub 2} in contrast to conventional metalorganic chemical vapor deposition based approaches.},
doi = {10.1063/1.2012519},
url = {https://www.osti.gov/biblio/20702595},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 7,
volume = 87,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2005},
month = {Mon Aug 15 00:00:00 EDT 2005}
}