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Title: Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope

Abstract

The change of the morphology and indium distribution in an In{sub 0.12}Ga{sub 0.88}N quantum well embedded in GaN was investigated depending on the duration of electron-beam irradiation in a transmission electron microscope. Strain-state analysis based on high-resolution lattice-fringe images was used to determine quantitatively the local and average indium concentration of the InGaN quantum well. In-rich clusters were found already in the first image taken after 20 s of irradiation. The indium concentration in the clusters tends to increase with prolonged irradiation time. In contrast, the locally averaged indium concentration and the quantum-well width do not change within the first minute.

Authors:
; ; ; ; ; ;  [1]
  1. Laboratorium fuer Elektronenmikroskopie, Universitaet Karlsruhe, D-76128 Karlsruhe (Germany)
Publication Date:
OSTI Identifier:
20702462
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 86; Journal Issue: 24; Other Information: DOI: 10.1063/1.1948517; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRON BEAMS; GALLIUM NITRIDES; IMAGES; INDIUM; INDIUM NITRIDES; IRRADIATION; MORPHOLOGY; QUANTUM WELLS; RESOLUTION; SEMICONDUCTOR MATERIALS; SPATIAL DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Li, T, Hahn, E, Gerthsen, D, Rosenauer, A, Strittmatter, A, Reissmann, L, Bimberg, D, Institut fuer Festkoerperphysik, Universitaet Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, and Institut fuer Festkoerperphysik, Technische Universitaet Berlin, D-l0623 Berlin. Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope. United States: N. p., 2005. Web. doi:10.1063/1.1948517.
Li, T, Hahn, E, Gerthsen, D, Rosenauer, A, Strittmatter, A, Reissmann, L, Bimberg, D, Institut fuer Festkoerperphysik, Universitaet Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, & Institut fuer Festkoerperphysik, Technische Universitaet Berlin, D-l0623 Berlin. Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope. United States. https://doi.org/10.1063/1.1948517
Li, T, Hahn, E, Gerthsen, D, Rosenauer, A, Strittmatter, A, Reissmann, L, Bimberg, D, Institut fuer Festkoerperphysik, Universitaet Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, and Institut fuer Festkoerperphysik, Technische Universitaet Berlin, D-l0623 Berlin. 2005. "Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope". United States. https://doi.org/10.1063/1.1948517.
@article{osti_20702462,
title = {Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope},
author = {Li, T and Hahn, E and Gerthsen, D and Rosenauer, A and Strittmatter, A and Reissmann, L and Bimberg, D and Institut fuer Festkoerperphysik, Universitaet Bremen, Otto-Hahn-Allee 1, D-28359 Bremen and Institut fuer Festkoerperphysik, Technische Universitaet Berlin, D-l0623 Berlin},
abstractNote = {The change of the morphology and indium distribution in an In{sub 0.12}Ga{sub 0.88}N quantum well embedded in GaN was investigated depending on the duration of electron-beam irradiation in a transmission electron microscope. Strain-state analysis based on high-resolution lattice-fringe images was used to determine quantitatively the local and average indium concentration of the InGaN quantum well. In-rich clusters were found already in the first image taken after 20 s of irradiation. The indium concentration in the clusters tends to increase with prolonged irradiation time. In contrast, the locally averaged indium concentration and the quantum-well width do not change within the first minute.},
doi = {10.1063/1.1948517},
url = {https://www.osti.gov/biblio/20702462}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 24,
volume = 86,
place = {United States},
year = {Mon Jun 13 00:00:00 EDT 2005},
month = {Mon Jun 13 00:00:00 EDT 2005}
}