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Title: Morphological Instability in InAs/GaSb Superlattices due to Interfacial Bonds

Synchrotron x-ray diffraction is used to compare the misfit strain and composition in a self-organized nanowire array in an InAs/GaSb superlattice with InSb interfacial bonds to a planar InAs/GaSb superlattice with GaAs interfacial bonds. It is found that the morphological instability that occurs in the nanowire array results from the large misfit strain that the InSb interfacial bonds have in the nanowire array. Based on this result, we propose that tailoring the type of interfacial bonds during the epitaxial growth of III-V semiconductor films provides a novel approach for producing the technologically important morphological instability in anomalously thin layers.
Authors:
;  [1] ;  [2] ; ; ;  [1] ;  [1] ;  [2] ;  [2] ;  [3]
  1. Department of Physics, University of Houston, Houston, Texas 77204-5005 (United States)
  2. (United States)
  3. Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
Publication Date:
OSTI Identifier:
20699377
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 95; Journal Issue: 9; Other Information: DOI: 10.1103/PhysRevLett.95.096104; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; EPITAXY; FILMS; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INDIUM ANTIMONIDES; INDIUM ARSENIDES; LAYERS; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; STRAINS; STRESSES; SUPERLATTICES; SYNCHROTRON RADIATION; X-RAY DIFFRACTION