Noncontacting laser photocarrier radiometric depth profilometry of harmonically modulated band bending in the space-charge layer at doped SiO{sub 2}-Si interfaces
- Institute fuer Experimentalphysik III, Festkoerperspekroskopie, Ruhr-Universitaet Bochum, Bochum D-44801, Germany and Center for Advanced Diffusion-Wave Technologies, Department of Mechanical and Industrial Engineering, University of Toronto, Ontario, M5S 3G8 (Canada)
Laser infrared photocarrier radiometry (PCR) was used with a harmonically modulated low-power laser pump and a superposed dc superband-gap optical bias (a secondary laser beam) to control and monitor the space-charge-layer (SCL) width in oxidized p-Si-SiO{sub 2} and n-Si-SiO{sub 2} interfaces (wafers) exhibiting charged interface-state related band bending. Applying the theory of PCR-SCL dynamics [A. Mandelis, J. Appl. Phys. 97, 083508 (2005)] to the experiments yielded various transport parameters of the samples as well as depth profiles of the SCL exhibiting complete ( p-type Si) or partial (n-type Si) band flattening, to a degree controlled by widely different minority-carrier capture cross section at each interface. The uncompensated charge density at the interface was also calculated from the theory.
- OSTI ID:
- 20668303
- Journal Information:
- Journal of Applied Physics, Vol. 97, Issue 8; Other Information: DOI: 10.1063/1.1850197; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
H{sup +} ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry
Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: Multi-parameter measurement reliability and precision studies