Versatile UHV compatible Knudsen type effusion cell
Abstract
A versatile Knudsen type effusion cell has been fabricated for growing nanostructures and epitaxial layers of metals and semiconductors. The cell provides excellent vacuum compatibility (10{sup -10} mbar range during operation), efficient water cooling, uniform heating, and moderate input power consumption (100 W at 1000 deg. C). The thermal properties of the cell have been determined. The performance of the cell has been assessed by x-ray photoemission spectroscopy (XPS) for Mn adlayer growth on Al(111). We find that this Knudsen cell has a stable deposition rate of 0.17 monolayer per minute at 550 deg. C. From the XPS spectra, we show that the Mn adlayers are completely clean, i.e., devoid of any surface contamination.
- Authors:
-
- Inter University Consortium for Department of Atomic Energy Facilities, Khandwa Road, Indore, 452017, Madhya Pradesh (India)
- Publication Date:
- OSTI Identifier:
- 20643990
- Resource Type:
- Journal Article
- Journal Name:
- Review of Scientific Instruments
- Additional Journal Information:
- Journal Volume: 75; Journal Issue: 11; Other Information: DOI: 10.1063/1.1793892; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; COOLING; DIFFUSION; EPITAXY; HEATING; MANGANESE; NANOSTRUCTURES; PERFORMANCE; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; SURFACE COATING; SURFACE CONTAMINATION; THERMODYNAMIC PROPERTIES; X-RAY PHOTOELECTRON SPECTROSCOPY
Citation Formats
Shukla, A K, Banik, S, Dhaka, R S, Biswas, C, Barman, S R, Haak, H, and Fritz Haber Institute der Max Planck Gesellschaft, Faradayweg 4-6, 14195, Berlin. Versatile UHV compatible Knudsen type effusion cell. United States: N. p., 2004.
Web. doi:10.1063/1.1793892.
Shukla, A K, Banik, S, Dhaka, R S, Biswas, C, Barman, S R, Haak, H, & Fritz Haber Institute der Max Planck Gesellschaft, Faradayweg 4-6, 14195, Berlin. Versatile UHV compatible Knudsen type effusion cell. United States. https://doi.org/10.1063/1.1793892
Shukla, A K, Banik, S, Dhaka, R S, Biswas, C, Barman, S R, Haak, H, and Fritz Haber Institute der Max Planck Gesellschaft, Faradayweg 4-6, 14195, Berlin. 2004.
"Versatile UHV compatible Knudsen type effusion cell". United States. https://doi.org/10.1063/1.1793892.
@article{osti_20643990,
title = {Versatile UHV compatible Knudsen type effusion cell},
author = {Shukla, A K and Banik, S and Dhaka, R S and Biswas, C and Barman, S R and Haak, H and Fritz Haber Institute der Max Planck Gesellschaft, Faradayweg 4-6, 14195, Berlin},
abstractNote = {A versatile Knudsen type effusion cell has been fabricated for growing nanostructures and epitaxial layers of metals and semiconductors. The cell provides excellent vacuum compatibility (10{sup -10} mbar range during operation), efficient water cooling, uniform heating, and moderate input power consumption (100 W at 1000 deg. C). The thermal properties of the cell have been determined. The performance of the cell has been assessed by x-ray photoemission spectroscopy (XPS) for Mn adlayer growth on Al(111). We find that this Knudsen cell has a stable deposition rate of 0.17 monolayer per minute at 550 deg. C. From the XPS spectra, we show that the Mn adlayers are completely clean, i.e., devoid of any surface contamination.},
doi = {10.1063/1.1793892},
url = {https://www.osti.gov/biblio/20643990},
journal = {Review of Scientific Instruments},
issn = {0034-6748},
number = 11,
volume = 75,
place = {United States},
year = {Mon Nov 01 00:00:00 EST 2004},
month = {Mon Nov 01 00:00:00 EST 2004}
}
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