Effect of O{sub 2} flow ratio on the microstructure and stress of room temperature reactively sputtered RuO{sub x} thin films
- Department of Chemical Engineering, University of Alabama, Tuscaloosa, Alabama 35487-0203 (United States)
RuO{sub x} thin films were deposited at room temperature by reactive radio frequency magnetron-sputtering using Ar/O{sub 2} discharges of varying O{sub 2} flow ratio (f{sub O{sub 2}}) over the range 10%-50% and were characterized using x-ray diffraction, x-ray reflectivity, x-ray photoelectron spectroscopy, resistivity, and stress-temperature measurements. With the increase of f{sub O{sub 2}}, the film texture changed from (110) to (101). Films deposited with f{sub O{sub 2}}>25% were determined stoichiometric. The residual stresses in as-deposited films were all compressive and increased with addition of O{sub 2}, except for the film sputtered at f{sub O{sub 2}}=20% which was in biaxial tension. The film deposited at f{sub O{sub 2}}=30% had a low resistivity value of 68 {mu}{omega} cm and near zero stress (<50 MPa tensile) after a thermal cycle in air up to 500 deg. C which is promising for use in microdevices.
- OSTI ID:
- 20637089
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 23, Issue 3; Other Information: DOI: 10.1116/1.1875272; (c) 2005 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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