Fabrication and photoluminescence properties of porous CdSe

Tiginyanu, I M; Monaico, E; Ursaki, V V; Tezlevan, V E; Boyd, Robert W

doi:10.1063/1.1864240

Title: Fabrication and photoluminescence properties of porous CdSe

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Abstract

We report the results of a study of the growth of pores in n-CdSe single crystals using anodic etching techniques. Upon anodization in dark, a nonuniform distribution of pores was produced. However, anodic dissolution of the material under in situ UV illumination proves to result in uniform distribution of pores stretching perpendicularly to the initial surface of the specimen. The porous structures exhibit less luminescence than the bulk samples. These results pave the way for cost-effective manufacturing of CdSe-based semiconductor nanotemplates for nanofabrication.

Authors:

Tiginyanu, I M; Monaico, E; Ursaki, V V; Tezlevan, V E; Boyd, Robert W ^[1]

National Center for Materials Study and Testing, Technical University of Moldova, Bd. Stefan cel Mare 168, Chisinau 2004 (Moldova, Republic of)

Publication Date:: Mon Feb 07 00:00:00 EST 2005

OSTI Identifier:: 20637014

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 86; Journal Issue: 6; Other Information: DOI: 10.1063/1.1864240; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ANODIZATION; CADMIUM SELENIDES; CRYSTAL GROWTH; ELECTROCHEMISTRY; ETCHING; FABRICATION; ILLUMINANCE; MANUFACTURING; MONOCRYSTALS; MORPHOLOGY; NANOSTRUCTURES; PHOTOLUMINESCENCE; POROUS MATERIALS; SEMICONDUCTOR MATERIALS; SURFACES; ULTRAVIOLET RADIATION

Citation Formats


                    Tiginyanu, I M, Monaico, E, Ursaki, V V, Tezlevan, V E, Boyd, Robert W, Laboratory of Low Dimensional Semiconductor Structures, Institute of Applied Physics, Academy of Sciences of Moldova, Academy strasse 5, Chisinau 2028, and Institute of Optics, University of Rochester, Rochester, New York 14627. Fabrication and photoluminescence properties of porous CdSe.  United States: N. p., 2005. 
        Web.  doi:10.1063/1.1864240.

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                    Tiginyanu, I M, Monaico, E, Ursaki, V V, Tezlevan, V E, Boyd, Robert W, Laboratory of Low Dimensional Semiconductor Structures, Institute of Applied Physics, Academy of Sciences of Moldova, Academy strasse 5, Chisinau 2028, & Institute of Optics, University of Rochester, Rochester, New York 14627. Fabrication and photoluminescence properties of porous CdSe.  United States.  https://doi.org/10.1063/1.1864240

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                    Tiginyanu, I M, Monaico, E, Ursaki, V V, Tezlevan, V E, Boyd, Robert W, Laboratory of Low Dimensional Semiconductor Structures, Institute of Applied Physics, Academy of Sciences of Moldova, Academy strasse 5, Chisinau 2028, and Institute of Optics, University of Rochester, Rochester, New York 14627. 2005.  
        "Fabrication and photoluminescence properties of porous CdSe".  United States.  https://doi.org/10.1063/1.1864240.

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@article{osti_20637014,

  title        = {Fabrication and photoluminescence properties of porous CdSe},

  author       = {Tiginyanu, I M and Monaico, E and Ursaki, V V and Tezlevan, V E and Boyd, Robert W and Laboratory of Low Dimensional Semiconductor Structures, Institute of Applied Physics, Academy of Sciences of Moldova, Academy strasse 5, Chisinau 2028 and Institute of Optics, University of Rochester, Rochester, New York 14627},

  abstractNote = {We report the results of a study of the growth of pores in n-CdSe single crystals using anodic etching techniques. Upon anodization in dark, a nonuniform distribution of pores was produced. However, anodic dissolution of the material under in situ UV illumination proves to result in uniform distribution of pores stretching perpendicularly to the initial surface of the specimen. The porous structures exhibit less luminescence than the bulk samples. These results pave the way for cost-effective manufacturing of CdSe-based semiconductor nanotemplates for nanofabrication.},

  doi          = {10.1063/1.1864240},

  url          = {https://www.osti.gov/biblio/20637014},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 6,

  volume       = 86,

  place        = {United States},

  year         = {Mon Feb 07 00:00:00 EST 2005},

  month        = {Mon Feb 07 00:00:00 EST 2005}

}

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