Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO{sub 2} layers

Journal Article · Mon Jan 10 00:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1849855· OSTI ID:20636936

Lopes, J M.J.; Zawislak, F C; Fichtner, P F.P.; Lovey, F C; Condo, A M ^[1]

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1. Instituto de Fisica - UFRGS, Cx. Postal 15051, 91501-970 Porto Alegre (Brazil)

Sn nanoclusters are synthesized in 180 nm SiO{sub 2} layers after ion implantation and heat treatment. Annealings in N{sub 2} ambient at high temperatures (T{>=}700 deg. C) lead to the formation of Sn nanoclusters of different sizes in metallic and in oxidized phases. High-resolution transmission electron microscopy (TEM) analyses revealed that the formed larger nanoparticles are composed by a Sn metallic core and a SnO{sub x} shell. The corresponding blue-violet photoluminescence (PL) presents low intensity. However, for heat treatments in vacuum, the PL intensity is increased by a factor of 5 and the TEM data show a homogeneous size distribution of Sn nanoclusters. The low intensity of PL for the N{sub 2} annealed samples is associated with Sn oxidation.

• OSTI ID: 20636936
• Journal Information: Applied Physics Letters, Vol. 86, Issue 2; Other Information: DOI: 10.1063/1.1849855; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ION IMPLANTATION
LAYERS
NANOSTRUCTURES
OXIDATION
PARTICLES
PHOTOLUMINESCENCE
SILICON OXIDES
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TIN
TRANSMISSION ELECTRON MICROSCOPY