Terahertz emission from p-lnAs due to the instantaneous polarization

Journal Article · Mon Sep 27 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1795980· OSTI ID:20634286

Adomavicius, R; Urbanowicz, A; Molis, G; Krotkus, A; Satkovskis, E ^[1]

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1. Semiconductor Physics Institute, A. Gostauto 11, 2600, Vilnius (Lithuania)

Terahertz radiation from differently doped n- and p-type InAs crystal surfaces was investigated by time-resolved measurement. Large increase of the emitted terahertz power has been observed for p-InAs samples with the p-doping levels of approximately 10{sup 16}-10{sup 17} cm{sup -3}. This increase was explained by a large surface depletion layer and an electric-field-induced optical rectification effect in this layer.

• OSTI ID: 20634286
• Journal Information: Applied Physics Letters, Vol. 85, Issue 13; Other Information: DOI: 10.1063/1.1795980; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALS
DEPLETION LAYER
DOPED MATERIALS
ELECTRIC FIELDS
FIELD EMISSION
INDIUM ARSENIDES
POLARIZATION
SEMICONDUCTOR MATERIALS
SURFACES
THZ RANGE
TIME RESOLUTION