Gate-controlled resonant interband tunneling in silicon

Journal Article · Mon Sep 06 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1783023· OSTI ID:20632772

Sedlmaier, S; Bhuwalka, Krishna K; Ludsteck, A; Schmidt, M; Schulze, J; Hansch, W; Eisele, I ^[1]

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1. Institute of Physics, Universitaet der Bundeswehr Muenchen, Werner-Heisenberg-Weg 39, D-85577 Neubiberg (Germany)

We present gate-controlled resonant interband tunneling on silicon <111>. The investigated structure principally consists of a vertical, gated p-i-n diode grown by molecular beam epitaxy. We evaluated the surface tunnel current from a gate-induced two-dimensional electron channel into the quantized hole states of a degenerately doped {delta}p{sup +} layer. This current reveals a negative differential resistance due to resonant interband tunneling in the forward biased p-i-n diode at 200 K. Even at room temperature the influence of this tunnel mechanism is observed. The experimental results are in good agreement with simulated band diagrams and their dependence on the applied voltages.

• OSTI ID: 20632772
• Journal Information: Applied Physics Letters, Vol. 85, Issue 10; Other Information: DOI: 10.1063/1.1783023; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTRIC POTENTIAL
ELECTRONS
FERMI LEVEL
HOLES
P-N JUNCTIONS
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TUNNEL EFFECT