Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation

Journal Article · Mon Aug 09 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1779353· OSTI ID:20632721

Hyun, S; Buh, G H; Hong, S H; Koo, B Y; Shin, Y G; Jung, U I; Moon, J T; Cho, M -H; Chang, H S; Moon, D W ^[1]

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1. Process Development Team, Semiconductor R and D Center, Samsung Electronics Co., LTD, Yongin-City, Gyeonggi-Do 449-711 (Korea, Republic of)

Ultrathin SiO{sub 2} grown by plasma-assisted oxidation (plasma oxide) has been investigated by high-resolution x-ray photoemission spectroscopy and medium energy ion scattering spectroscopy. We found that the plasma oxide grown at the low temperature of 400 deg. C has a thinner transition layer than conventional thermal oxide. This thinner transition layer in the plasma oxide not only decreased the gate leakage current effectively, but also enhanced the reliability of the gate oxide. We attribute these electrical properties of the plasma oxide to the reduction of the transition layer.

• OSTI ID: 20632721
• Journal Information: Applied Physics Letters, Vol. 85, Issue 6; Other Information: DOI: 10.1063/1.1779353; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRICAL PROPERTIES
LAYERS
LEAKAGE CURRENT
OXIDATION
PHOTOEMISSION
PLASMA
SEMICONDUCTOR MATERIALS
SILICON OXIDES
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY