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Title: Examination of Critical Length Effect in Copper Interconnects With Oxide and Low-k Dielectrics

Abstract

As technology moves toward faster microelectronic devices with smaller feature sizes, copper is replacing aluminum-copper alloy and low-k dielectric is replacing oxide as the materials of choice for advanced interconnect integrations. Copper not only brings to the table the advantage of lower resistivity, but also exhibits better electromigration performance when compared to Al(Cu). Low-k dielectric materials are advantageous because they reduce power consumption and improve signal delay. Due to these advantages, the industry trend is moving towards integrating copper and low-k dielectric for high performance interconnects. The purpose of this study is to evaluate the critical length effect in single-inlaid copper interconnects and determine the critical product (jl)c, for a variety of integrations, examining the effect of ILD (oxide vs. low-k), geometry, and stress temperature.

Authors:
; ; ; ;  [1]; ;  [2]
  1. CMOS Platform Device Development, Technology Solutions Organization, Freescale Semiconductor, Inc., Austin, TX 78721 (United States)
  2. Advanced Products Research and Development Laboratory, Technology Solutions Organization, Freescale Semiconductor, Inc., Austin, TX 78721 (United States)
Publication Date:
OSTI Identifier:
20630471
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 741; Journal Issue: 1; Conference: 7. international workshop on stress-induced phenomena in metallization, Austin, TX (United States), 14-16 Jun 2004; Other Information: DOI: 10.1063/1.1845846; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; COPPER; COPPER ALLOYS; DIELECTRIC MATERIALS; ELECTROPHORESIS; GEOMETRY; INTEGRATED CIRCUITS; PERFORMANCE; PERMITTIVITY; STRESSES

Citation Formats

Thrasher, Stacye, Gall, Martin, Justison, Patrick, Hernandez, Richard, Kawasaki, Hisao, Capasso, Cristiano, and Nguyen, Timothy. Examination of Critical Length Effect in Copper Interconnects With Oxide and Low-k Dielectrics. United States: N. p., 2004. Web. doi:10.1063/1.1845846.
Thrasher, Stacye, Gall, Martin, Justison, Patrick, Hernandez, Richard, Kawasaki, Hisao, Capasso, Cristiano, & Nguyen, Timothy. Examination of Critical Length Effect in Copper Interconnects With Oxide and Low-k Dielectrics. United States. https://doi.org/10.1063/1.1845846
Thrasher, Stacye, Gall, Martin, Justison, Patrick, Hernandez, Richard, Kawasaki, Hisao, Capasso, Cristiano, and Nguyen, Timothy. 2004. "Examination of Critical Length Effect in Copper Interconnects With Oxide and Low-k Dielectrics". United States. https://doi.org/10.1063/1.1845846.
@article{osti_20630471,
title = {Examination of Critical Length Effect in Copper Interconnects With Oxide and Low-k Dielectrics},
author = {Thrasher, Stacye and Gall, Martin and Justison, Patrick and Hernandez, Richard and Kawasaki, Hisao and Capasso, Cristiano and Nguyen, Timothy},
abstractNote = {As technology moves toward faster microelectronic devices with smaller feature sizes, copper is replacing aluminum-copper alloy and low-k dielectric is replacing oxide as the materials of choice for advanced interconnect integrations. Copper not only brings to the table the advantage of lower resistivity, but also exhibits better electromigration performance when compared to Al(Cu). Low-k dielectric materials are advantageous because they reduce power consumption and improve signal delay. Due to these advantages, the industry trend is moving towards integrating copper and low-k dielectric for high performance interconnects. The purpose of this study is to evaluate the critical length effect in single-inlaid copper interconnects and determine the critical product (jl)c, for a variety of integrations, examining the effect of ILD (oxide vs. low-k), geometry, and stress temperature.},
doi = {10.1063/1.1845846},
url = {https://www.osti.gov/biblio/20630471}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 741,
place = {United States},
year = {Wed Dec 08 00:00:00 EST 2004},
month = {Wed Dec 08 00:00:00 EST 2004}
}