Local structure and bonding of Er in GaN: A contrast with Er in Si
Abstract
X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. %) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si. (c) 2000 American Institute of Physics.
- Authors:
-
- Bell Labs, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
- University of Cincinnati, Nanoelectronics Laboratory, Cincinnati, Ohio 45221 (United States)
- Publication Date:
- OSTI Identifier:
- 20216360
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 76; Journal Issue: 20; Other Information: PBD: 15 May 2000; Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM NITRIDES; DOPED MATERIALS; ERBIUM ADDITIONS; X-RAY SPECTROSCOPY; BONDING; ELECTROLUMINESCENCE; STRUCTURAL CHEMICAL ANALYSIS; FINE STRUCTURE; NSLS; EXPERIMENTAL DATA
Citation Formats
Citrin, P H, Northrup, P A, Birkhahn, R, and Steckl, A J. Local structure and bonding of Er in GaN: A contrast with Er in Si. United States: N. p., 2000.
Web. doi:10.1063/1.126499.
Citrin, P H, Northrup, P A, Birkhahn, R, & Steckl, A J. Local structure and bonding of Er in GaN: A contrast with Er in Si. United States. https://doi.org/10.1063/1.126499
Citrin, P H, Northrup, P A, Birkhahn, R, and Steckl, A J. 2000.
"Local structure and bonding of Er in GaN: A contrast with Er in Si". United States. https://doi.org/10.1063/1.126499.
@article{osti_20216360,
title = {Local structure and bonding of Er in GaN: A contrast with Er in Si},
author = {Citrin, P H and Northrup, P A and Birkhahn, R and Steckl, A J},
abstractNote = {X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. %) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126499},
url = {https://www.osti.gov/biblio/20216360},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 76,
place = {United States},
year = {Mon May 15 00:00:00 EDT 2000},
month = {Mon May 15 00:00:00 EDT 2000}
}
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