Mass transport, faceting and behavior of dislocations in GaN

Conference · Sat Jul 01 00:00:00 EDT 2000

OSTI ID:20104527

Nitta, S; Kashima, T; Kariya, M; Yukawa, Y; Yamaguchi, S; Amano, H; Akasaki, I

The behavior of threading dislocations during mass transport of GaN was investigated in detail by transmission electron microscopy. Mass transport occurred at the surface. Therefore, growing species are supplied from the in-plane direction. The behavior of threading dislocations was found to be strongly affected by the mass transport process as well as the high crystallographic anisotropy of the surface energy of the facets particular to GaN.

• Research Organization: Meijo Univ., Nagoya (JP)
• Sponsoring Organization: Japan Society for the Promotion of Science Research; Ministry of Education, Science, Sports and Culture of Japan
• OSTI ID: 20104527
• Resource Relation: Conference: 1999 Materials Research Society Fall Meeting, Boston, MA (US), 11/28/1999--12/03/1999; Other Information: PBD: 2000; Related Information: In: GaN and related alloys -- 1999. Materials Research Society symposium proceedings, Volume 595, by Myers, T.H.; Feenstra, R.M.; Shur, M.S.; Amano, Hiroshi [eds.], [1050] pages.
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
MICROSTRUCTURE
VAPOR PHASE EPITAXY
GALLIUM NITRIDES
THIN FILMS
DISLOCATIONS
ANISOTROPY
MICROSCOPY
DATA