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Title: Photocapacitance and hole drift mobility measurements in hydrogenated amorphous silicon (a-Si:H)

Abstract

The authors present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.

Authors:
;
Publication Date:
Research Org.:
Syracuse Univ., NY (US)
OSTI Identifier:
20085555
Resource Type:
Conference
Resource Relation:
Conference: Amorphous and Microcrystalline Silicon Technology - 1997, San Francisco, CA (US), 03/31/1997--04/04/1997; Other Information: PBD: 1997; Related Information: In: Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467, by Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I. [eds.], 999 pages.
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; SCHOTTKY BARRIER SOLAR CELLS; CAPACITANCE; HOLES; CARRIER MOBILITY; AMORPHOUS STATE; HYDROGEN ADDITIONS

Citation Formats

Nurdjaja, I, and Schiff, E A. Photocapacitance and hole drift mobility measurements in hydrogenated amorphous silicon (a-Si:H). United States: N. p., 1997. Web.
Nurdjaja, I, & Schiff, E A. Photocapacitance and hole drift mobility measurements in hydrogenated amorphous silicon (a-Si:H). United States.
Nurdjaja, I, and Schiff, E A. 1997. "Photocapacitance and hole drift mobility measurements in hydrogenated amorphous silicon (a-Si:H)". United States.
@article{osti_20085555,
title = {Photocapacitance and hole drift mobility measurements in hydrogenated amorphous silicon (a-Si:H)},
author = {Nurdjaja, I and Schiff, E A},
abstractNote = {The authors present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.},
doi = {},
url = {https://www.osti.gov/biblio/20085555}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 01 00:00:00 EDT 1997},
month = {Tue Jul 01 00:00:00 EDT 1997}
}

Conference:
Other availability
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