Ion bombardment and disorder in amorphous silicon
Abstract
The effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects.
- Authors:
- Publication Date:
- Research Org.:
- Univ. of Toronto, Ontario (CA)
- OSTI Identifier:
- 20085537
- Resource Type:
- Conference
- Resource Relation:
- Conference: Amorphous and Microcrystalline Silicon Technology - 1997, San Francisco, CA (US), 03/31/1997--04/04/1997; Other Information: PBD: 1997; Related Information: In: Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467, by Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I. [eds.], 999 pages.
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SILICON; AMORPHOUS STATE; IONS; PHYSICAL RADIATION EFFECTS; MICROSTRUCTURE; OPTICAL PROPERTIES; CRYSTAL GROWTH; ORDER-DISORDER TRANSFORMATIONS
Citation Formats
Sidhu, L S, Gaspari, F, and Zukotynski, S. Ion bombardment and disorder in amorphous silicon. United States: N. p., 1997.
Web.
Sidhu, L S, Gaspari, F, & Zukotynski, S. Ion bombardment and disorder in amorphous silicon. United States.
Sidhu, L S, Gaspari, F, and Zukotynski, S. 1997.
"Ion bombardment and disorder in amorphous silicon". United States.
@article{osti_20085537,
title = {Ion bombardment and disorder in amorphous silicon},
author = {Sidhu, L S and Gaspari, F and Zukotynski, S},
abstractNote = {The effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects.},
doi = {},
url = {https://www.osti.gov/biblio/20085537},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 01 00:00:00 EDT 1997},
month = {Tue Jul 01 00:00:00 EDT 1997}
}