Study of dose effects on IGBT-type devices subjected to gamma irradiation
In the nuclear power industry, speed control has become a mandatory requirement for induction motors used in the precision handling of dangerous substances. Because of this trend, the control systems of such actuators are now being exposed in service to neutrons and gamma radiation. Use of insulated gate bipolar-type transistors in power stage amplifiers has likewise become unavoidable, since IGBTs ensure better conduction and are less expensive than MOS (metal oxide semiconductor) transistors. As no hardened IGBTs are available on the market, it is necessary to study the radiation responses of the COTS versions of these products. This document describes the characterization tests performed on an IGBT transistor, International Rectifier model IRGP45OUD2. It also provides an analysis of IGBT behavior, using an electrical model and a PSPICE simulator.
- Research Organization:
- LETI CE/S, Gif sur Yvette (FR)
- OSTI ID:
- 20014727
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Vol. 46, Issue 6Pt1; Conference: 1999 IEEE Nuclear and Space Radiation Effects Conference, Norfolk, VA (US), 07/12/1999--07/16/1999; Other Information: PBD: Dec 1999; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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