Cracking phenomena in In{sub 0.25}Ga{sub 0.75}As films on InP substrates
Journal Article
·
· Acta Materialia
The strain relaxation of a series of In{sup 0.25}Ga{sub 0.75}As films grown on (100) InP substrates (lattice mismatch = 2%) has been studied by electron microscopy. The mechanisms of strain relief (in the first stages of growth) occurred by cracking on (0{bar 1}1), and by twinning on (111) and ({bar 1}11) planes. Cracking was a transitory process with the density of cracks being highest in a 20 nm thick film, while a 500 nm thick film was crack-free. These results are discussed in the context of different cracking and crack-healing models.
- Research Organization:
- McMaster Univ., Hamilton, Ontario (CA)
- OSTI ID:
- 20000480
- Journal Information:
- Acta Materialia, Vol. 47, Issue 12; Other Information: PBD: 29 Sep 1999; ISSN 1359-6454
- Country of Publication:
- United States
- Language:
- English
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