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Title: New p-type absorber films formed by interfacial diffusion in chemically deposited metal chalcogenide multilayer films

Abstract

The authors report on new p-type ternary metal chalcogenide absorber films for possible solar energy applications. The films are formed by interfacial diffusion in chemically deposited multilayer films: CuS films (0.15--0.6 {micro}m) deposited on ZnS, PbS or Bi{sub 2}S{sub 3} films ({approx} 0.1 {micro}m). The diffusion takes place during annealing at temperatures above 150 C and is shown in the XPS depth profile spectra of the annealed samples: metal atoms (Zn, Pb or Bi) of the underlying substrate films are detected at the surface layers after the annealing. The peculiarity of the multilayer films is that they show almost constant sheet resistance upon further annealing until 350 C. The sheet resistances are in the range of 20--100 {Omega} suggesting conductivities (p-type) of up to 400 {Omega}{sup {minus}1}. In the case of CuS on Bi{sub 2}S{sub 3} films, the formation of a compound, Cu{sub 3}BiS{sub 3}, is clearly detected. These have applications for solar cells.

Authors:
; ;  [1]; ; ;  [2]
  1. Univ. Nacional Autonoma de Mexico, Morelos (Mexico). Lab. de Energia Solar
  2. Texas A and M Univ., College Station, TX (United States)
Publication Date:
OSTI Identifier:
197621
Report Number(s):
CONF-950793-
ISBN 0-8194-1890-0; TRN: IM9612%%395
Resource Type:
Book
Resource Relation:
Conference: 40. annual meeting of the Society of Photo-Optical Instrumentation Engineers, San Diego, CA (United States), 9-14 Jul 1995; Other Information: PBD: 1995; Related Information: Is Part Of Optical materials technology for energy efficiency and solar energy conversion XIV; Lampert, C.M. [ed.] [Lawrence Berkeley Lab., CA (United States). Energy and Environment Div.]; Deb, S.K. [ed.] [National Renewable Energy Lab., Golden, CO (United States)]; Grandqvist, C.G. [ed.] [Uppsala Univ. (Sweden). Dept. of Technology]; PB: 379 p.; Proceedings/SPIE, Volume 2531
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SOLAR CELLS; SEMICONDUCTOR MATERIALS; COPPER SULFIDES; FABRICATION; PHYSICAL PROPERTIES; ZINC SULFIDES; LEAD SULFIDES; BISMUTH SULFIDES; SOLAR ABSORBERS; P-TYPE CONDUCTORS; LAYERS; ELECTRICAL PROPERTIES; X-RAY DIFFRACTION; EXPERIMENTAL DATA; PHOTOELECTRON SPECTROSCOPY; OPTICAL PROPERTIES; SOLAR CONTROL FILMS; COMPOSITE MATERIALS

Citation Formats

Nair, P K, Nair, M T.S., Hu, H, Huang, L, Zingaro, R A, and Meyers, E A. New p-type absorber films formed by interfacial diffusion in chemically deposited metal chalcogenide multilayer films. United States: N. p., 1995. Web.
Nair, P K, Nair, M T.S., Hu, H, Huang, L, Zingaro, R A, & Meyers, E A. New p-type absorber films formed by interfacial diffusion in chemically deposited metal chalcogenide multilayer films. United States.
Nair, P K, Nair, M T.S., Hu, H, Huang, L, Zingaro, R A, and Meyers, E A. 1995. "New p-type absorber films formed by interfacial diffusion in chemically deposited metal chalcogenide multilayer films". United States.
@article{osti_197621,
title = {New p-type absorber films formed by interfacial diffusion in chemically deposited metal chalcogenide multilayer films},
author = {Nair, P K and Nair, M T.S. and Hu, H and Huang, L and Zingaro, R A and Meyers, E A},
abstractNote = {The authors report on new p-type ternary metal chalcogenide absorber films for possible solar energy applications. The films are formed by interfacial diffusion in chemically deposited multilayer films: CuS films (0.15--0.6 {micro}m) deposited on ZnS, PbS or Bi{sub 2}S{sub 3} films ({approx} 0.1 {micro}m). The diffusion takes place during annealing at temperatures above 150 C and is shown in the XPS depth profile spectra of the annealed samples: metal atoms (Zn, Pb or Bi) of the underlying substrate films are detected at the surface layers after the annealing. The peculiarity of the multilayer films is that they show almost constant sheet resistance upon further annealing until 350 C. The sheet resistances are in the range of 20--100 {Omega} suggesting conductivities (p-type) of up to 400 {Omega}{sup {minus}1}. In the case of CuS on Bi{sub 2}S{sub 3} films, the formation of a compound, Cu{sub 3}BiS{sub 3}, is clearly detected. These have applications for solar cells.},
doi = {},
url = {https://www.osti.gov/biblio/197621}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Dec 31 00:00:00 EST 1995},
month = {Sun Dec 31 00:00:00 EST 1995}
}

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