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Title: Redistribution of Implanted Dopants in GaN

Donor (S, Se and Te) and acceptor (Mg, Be and C) dopants have been implanted into GaN at doses of 3-5x1014 cm-2 and annealed at temperatures up to 1450 *C. No redistribution of any of the elements is detectable by Secondary Ion Mass Spectrometry, except for Be, which displays an apparent damage-assisted diffusion at 900 "C. At higher temperatures there is no further movement of the Be, suggesting that the point defect flux that assists motion at lower temperatures has been annealed. Effective diffusivities are <2X 1013 cm2.sec-1 at 1450 `C for each of the dopants in GaN.
Authors:
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Publication Date:
OSTI Identifier:
1957
Report Number(s):
SAND98-2591J
ON: DE00001957
DOE Contract Number:
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Electronic Materials
Research Org:
Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; Gallium Nitrides; Gallium Nitrides; Semiconductor Materials; Semiconductor Materials; Doped Materials; Doped Materials; Annealing; Annealing