Physical properties of RT-LPCVD and LPCVD polysilicon thin films: Application to emitter solar cell

Book · Sat Dec 31 00:00:00 EST 1994

OSTI ID:191028

Lemiti, M; Semmache, B; Barbier, D; Laugier, A ^[1]; Le, Q N ^[2]

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1. LPM-INSA de Lyon, Villeurbanne (France)
2. Photowatt International, Bourgoin-Jallieu (France)

This investigation was implemented in the framework of a novel all-low thermal budget polysilicon emitter solar cells fabrication technology. A comparative study of structural and electrical properties of thin silicon layer deposited by silane pyrolysis in a classical hot-wall furnace (LPCVD) and a cold-wall RTP reactor (RT-LPCVD) has been made. Deposition conditions and rapid thermal anneals were varied in order to improve the physical properties of RT-LPCVD polysilicon films. The structural properties have been characterized by means of grazing X-ray diffraction and cross-section TEM analysis. Sheet resistivity measurements performed on POCl{sub 3}-doped and subsequently rapid thermal annealed films showed the feasibility of low resistivity films particularly when the polysilicon layers are initially deposited in the amorphous state. Finally, RTCVD polysilicon emitter solar cells with various thicknesses were tested by spectral photo-response analysis.

• OSTI ID: 191028
• Report Number(s): CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9610%%29
• Resource Relation: Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty-fourth IEEE photovoltaic specialists conference -- 1994. Volume 2; PB: 1268 p.
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
SILICON
CHEMICAL VAPOR DEPOSITION
MICROSTRUCTURE
ELECTRIC CONDUCTIVITY
SILICON SOLAR CELLS
PERFORMANCE
SILANES
PYROLYSIS
REACTION KINETICS
SILICON OXIDES
ANNEALING
CRYSTAL STRUCTURE
X-RAY DIFFRACTION
TRANSMISSION ELECTRON MICROSCOPY
DOPED MATERIALS
PHOSPHORUS
SPECTRAL RESPONSE
EFFICIENCY
EXPERIMENTAL DATA