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Title: GaN: Defect and Device Issues

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.
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Publication Date:
OSTI Identifier:
Report Number(s):
ON: DE00001653
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Review
Research Org:
Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
Sponsoring Org:
Country of Publication:
United States
36 MATERIALS SCIENCE; Gallium Nitrides; Gallium Nitrides; Point Defects; Point Defects; Impurities; Impurities