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Title: Distribution and Chemical State of Cu-rich Clusters in Silicon: Preprint

the chemical state and distribution of Cu-rich clusters were determined in four different silicon-based materials with varying contamination pathways and degrees of oxygen concentration, including as-grown multicrystalline silicon. In all four samples, Cu3Si was the only chemical state observed. Cu3Si clusters were observed at structural defects within all four materials; XBIC measurements revealed that the presence of Cu3Si corresponds to increased recombination activity. Oxidized Cu compounds are not likely to form in silicon. The +1 eV edge shift in the -XAS absorption spectrum of Cu3Si relative to Cu metal is believed to be an indication of a degree of covalent bonding between Cu atoms and their silicon neighbors.
Authors:
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Publication Date:
OSTI Identifier:
15009893
Report Number(s):
NREL/CP-520-36748
TRN: US200430%%1576
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Prepared for the 14th Workshop on Crystalline Silicon Solar Cells and Modules, Winter Park, CO (US), 08/08/2004--08/11/2004; Other Information: PBD: 1 Aug 2004
Research Org:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Org:
US Department of Energy (US)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ABSORPTION; ATOMS; BONDING; CHEMICAL STATE; CONTAMINATION; DEFECTS; DISTRIBUTION; OXYGEN; RECOMBINATION; SILICON; SILICON SOLAR CELLS; IMPURITIES; CRYSTAL GROWTH; PASSIVATION; MICROELECTRONICS; SOLAR ENERGY; PV; PHOTOVOLTAICS; SOLAR CELLS; CRYSTALLINE SILICON; MATERIALS AND PROCESSES; MODULE; DEVICE PROCESS; DEFECT; SOLAR ENERGY - PHOTOVOLTAICS