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Title: Dark Current Transients in Thin-Film CdTe Solar Cells: Preprint

This conference paper describes the Dark current transients measured by changing the voltage bias in a stepwise fashion on CdTe cells results in minutes-long transients after each step. Transients measured at room temperature are controlled by carrier trapping that corresponds to the well known voltage transient phenomena[1]. Transients measured on the same CdTe cell at elevated temperature (60C and 90C) show a much slower decay process. We associate this physical process with''shunt'' current paths induced with reverse bias and removed with forward bias. A different back contact process may produce an opposite voltage dependence. The lack of these transients may be required for the fabrication of ''stable'' thin-film CdTe solar cells.
Authors:
Publication Date:
OSTI Identifier:
15007050
Report Number(s):
NREL/CP-520-32194
TRN: US200413%%99
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 May 2002; Related Information: Prepared for the 29th IEEE PV Specialists Conference, 20-24 May
Research Org:
National Renewable Energy Lab., Golden, CO. (US)
Sponsoring Org:
US Department of Energy (US)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; DECAY; FABRICATION; SOLAR CELLS; TRANSIENTS; TRAPPING; SOLAR ENERGY PV; DARK CURRENT TRANSIENTS; BACK CONTRACT; CURRENT VOLTAGE (I-V) CURVES; SHUNT PATHS; METAL ION MIGRATION; STABLE THIN-FILM CDTE SOLAR CELLS; SOLAR ENERGY - PHOTOVOLTAICS