skip to main content

Title: Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application: Preprint

This conference paper describes the analysis of the potential of GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize three factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the old AM1.5 direct standard spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than {approx}75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-eV three-junction device.
Authors:
; ;
Publication Date:
OSTI Identifier:
15007049
Report Number(s):
NREL/CP-520-32188
TRN: US200413%%98
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 May 2002; Related Information: Prepared for the 29th IEEE PV Specialists Conference, 20-24 May
Research Org:
National Renewable Energy Lab., Golden, CO. (US)
Sponsoring Org:
US Department of Energy (US)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ANTIREFLECTION COATINGS; CONCENTRATORS; EFFICIENCY; SOLAR CELLS; SOLAR ENERGY PV; FOUR-JUNCTION SOLAR CELL; GAINP/GAAS/1-EV/GE; TERRESTRIAL CONCENTRATOR SPECTRUM; TWO-LAYER ANTIREFLECTION COATINGS; GAINNAS JUNCTIONS; MINORITY-CARRIER; PHOTOCURRENT; SOLAR ENERGY - PHOTOVOLTAICS