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Title: 1-MeV-Electron Irradiation of GaInAsN Cells: Preprint

This conference paper describes the GaInAsN cells that are measured to retain 933% and 894% of their original efficiency after exposure to 5 X 1014 and 1 X 1015 cm-2 1-MeV electrons, respectively. The rate of degradation is not correlated with the performance at beginning of life (BOL). The depletion width remains essentially unchanged, increasing by< 1%. Temperature-coefficient data for GaInAsN cells are also presented. These numbers are used to project the efficiency of GaInAsN-containing multijunction cells. The GaInAsN junction is not currently predicted to increase the efficiencies of the multijunction cells. Nevertheless, GaInAsN-containing multijunction cell efficiencies are predicted to be comparable to those of the conventional structures, and even small improvements in the GaInAsN cell may lead to higher multijunction cell efficiencies, especially for high-radiation applications and when cell operating temperature is low.
Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
15007047
Report Number(s):
NREL/CP-520-32006
TRN: US200413%%96
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 May 2002; Related Information: Prepared for the 29th IEEE PV Specialists Conference, 20-24 May
Research Org:
National Renewable Energy Lab., Golden, CO. (US)
Sponsoring Org:
US Department of Energy (US)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; EFFICIENCY; ELECTRONS; IRRADIATION; PERFORMANCE; TEMPERATURE COEFFICIENT PV; 1-MEV ELECTRON IRRADIATION; MULTIJUNCTION CELLS; PHOTOCURRENT; RADIATION-RESISTANT DEVICE; QUANTUM EFFICIENCY (QE); SHORT-CIRCUIT CURRENT; DIODE QUALITY FACTOR; LINEAR INTERPOLATION; CAPACITANCE-VOLTAGE; SOLAR ENERGY - PHOTOVOLTAICS