APIVT-Grown Silicon Thin Layers and PV Devices: Preprint

Conference · Wed May 01 00:00:00 EDT 2002

DOI:https://doi.org/10.1109/PVSC.2002.1190464· OSTI ID:15006971

Wang, T H; Ciszek, T F; Page, M R; Bauer, R E; Wang, Q; Landry, M D

Large-grained (5-20 ..mu..m) polycrystalline silicon layers have been grown at intermediate temperatures of 750-950C directly on foreign substrates without a seeding layer by iodine vapor transport at atmospheric pressure with rates as high as 3 mm/min. A model is constructed to explain the atypical temperature dependence of growth rate. We have also used this technique to grow high-quality epitaxial layers on heavily doped CZ-Si and on upgraded MG-Si substrates. Possible solar cell structures of thin-layer polycrystalline silicon on foreign substrates with light trapping have been examined, compared, and optimized by two-dimensional device simulations. The effects of grain boundary re-combination on device performance are presented for two grain sizes of 2 and 20 mm. We found that 104 cm/s recombination velocity is adequate for 20-m m grain-sized thin silicon, whereas a very low recombination velocity of 103 cm/s must be accomplished in order to achieve reasonable performance for a 2- mm grain-sized polycrystalline silicon device.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC36-99-GO10337
• OSTI ID: 15006971
• Report Number(s): NREL/CP-520-31441; TRN: US200412%%540
• Resource Relation: Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 May 2002; Related Information: Prepared for the 29th IEEE PV Specialists Conference, 20-24 May
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ATMOSPHERIC PRESSURE
GRAIN SIZE
IODINE
PERFORMANCE
RECOMBINATION
SILICON
SOLAR CELLS
SUBSTRATES
TEMPERATURE DEPENDENCE
TRANSPORT
TRAPPING
VELOCITY
PV
ATMOSPHERIC PRESSURE IODINE VAPOR TRANSPORT (APIVT)
MICROCRYSTALLINE SILICON
TWO-DIMENSIONAL DEVICE
SINGLE JUNCTION
EPITAXIAL LAYERS
GRAIN BOUNDARY
RECOMBINATION VELOCITY
SOLAR ENERGY - PHOTOVOLTAICS