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Title: H Diffusion for Impurity and Defect Passivation: A Physical Model for Solar Cell Processing; Preprint

We propose a physical model for diffusion of H in Si containing impurities and defects. The diffusion occurs via several parallel mechanisms, involving complex formation (trapping) and dissociation (detrapping) at impurities and defects, hopping in lattice interstitial sites, and charge-state conversion. The role of bulk and process-induced traps is considered to explain observations from plasma, ion implantation, and PECVD-nitridation processes.
Authors:
; ;
Publication Date:
OSTI Identifier:
15006965
Report Number(s):
NREL/CP-520-31396
TRN: US200412%%534
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 May 2002; Related Information: Prepared for the 29th IEEE PV Specialists Conference, 20-24 May
Research Org:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Org:
US Department of Energy (US)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; 25 ENERGY STORAGE; BATTERY CHARGE STATE; DEFECTS; DIFFUSION; DISSOCIATION; IMPURITIES; INTERSTITIALS; ION IMPLANTATION; PASSIVATION; PLASMA; PROCESSING; SOLAR CELLS; TRAPPING PV; H DIFFUSION; SOLAR CELL PROCESSING; IMPURITIES; DEFECTS; OPTIMUM PASSIVATION; TRAPS; NITRIDATION; SOLAR ENERGY - PHOTOVOLTAICS