Ohmic contacts to Al-rich AlGaN heterostructures

Douglas, E. A.; Reza, S.; Sanchez, C.; Koleske, D.; Allerman, A.; Klein, B.; Armstrong, A. M.; Kaplar, R. J.; Baca, A. G.

doi:10.1002/pssa.201600842

Title: Ohmic contacts to Al-rich AlGaN heterostructures

Journal Article · Tue Jun 06 00:00:00 EDT 2017 · Physica Status Solidi. A, Applications and Materials Science

DOI:https://doi.org/10.1002/pssa.201600842· OSTI ID:1398780

Douglas, E. A. ^[1]; Reza, S. ^[1]; Sanchez, C. ^[1]; Koleske, D. ^[1]; Allerman, A. ^[1]; Klein, B. ^[1]; Armstrong, A. M. ^[1]; Kaplar, R. J. ^[1]; Baca, A. G. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Due to the ultra-wide bandgap of Al-rich AlGaN, up to 5.8 eV for the structures in this study, obtaining low resistance ohmic contacts is inherently difficult to achieve. A comparative study of three different fabrication schemes is presented for obtaining ohmic contacts to an Al-rich AlGaN channel. Schottky-like behavior was observed for several different planar metallization stacks (and anneal temperatures), in addition to a dry-etch recess metallization contact scheme on Al_0.85Ga_0.15N/Al_0.66Ga_0.34N. However, a dry etch recess followed by n⁺-GaN regrowth fabrication process is reported as a means to obtain lower contact resistivity ohmic contacts on a Al_0.85Ga_0.15N/Al_0.66Ga_0.34N heterostructure. In conclusion, specific contact resistivity of 5×10^-3 Ω cm² was achieved after annealing Ti/Al/Ni/Au metallization.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1398780

Alternate ID(s):: OSTI ID: 1374948

Report Number(s):: SAND-2017-9872J; 656978

Journal Information:: Physica Status Solidi. A, Applications and Materials Science, Vol. 214, Issue 8; ISSN 1862-6300

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 37 works

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Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor Lundh, James Spencer; Chatterjee, Bikramjit; Song, Yiwen Applied Physics Letters, Vol. 115, Issue 15 https://doi.org/10.1063/1.5115013	journal	October 2019
Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors Razzak, Towhidur; Hwang, Seongmo; Coleman, Antwon Applied Physics Letters, Vol. 115, Issue 4 https://doi.org/10.1063/1.5108529	journal	July 2019

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