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Title: Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

Journal Article · · Scientific Reports
DOI:https://doi.org/10.1038/srep35036· OSTI ID:1393430
 [1];  [1];  [1];  [1];  [1]
  1. Univ. of Wyoming, Laramie, WY (United States). Dept. of Physics and Astronomy

We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. Finally, this work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.

Research Organization:
Univ. of Wyoming, Laramie, WY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Biological and Environmental Research (BER)
Grant/Contract Number:
FG02-10ER46728; SC0004981
OSTI ID:
1393430
Journal Information:
Scientific Reports, Vol. 6, Issue 1; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 13 works
Citation information provided by
Web of Science

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