Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires
- Univ. of Wyoming, Laramie, WY (United States). Dept. of Physics and Astronomy
We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. Finally, this work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.
- Research Organization:
- Univ. of Wyoming, Laramie, WY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Biological and Environmental Research (BER)
- Grant/Contract Number:
- FG02-10ER46728; SC0004981
- OSTI ID:
- 1393430
- Journal Information:
- Scientific Reports, Vol. 6, Issue 1; ISSN 2045-2322
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Modeling of Temperature‐Dependent Sign Reversal of Magnetoresistance in 99.95% La 0.7 Sr 0.3 MnO 3 − 0.05% Paraffin Wax Nanocomposite: The Role of Pinning Center at Intergrain Defect Site
|
journal | September 2019 |
Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film
|
journal | April 2018 |
High temperature synthesis and characterization of ultrathin tellurium nanostructures
|
journal | August 2019 |
Similar Records
Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires
Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal