Response Variability in Commercial MOSFET SEE Qualification

George, J. S.; Clymer, D. A.; Turflinger, T. L.; Mason, L. W.; Stone, S.; Koga, R.; Beach, E.; Huntington, K.; Lauenstein, J. -M.; Titus, J.; Sivertz, M.

doi:10.1109/TNS.2016.2633358

Title: Response Variability in Commercial MOSFET SEE Qualification

Journal Article · Thu Dec 01 00:00:00 EST 2016 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2016.2633358· OSTI ID:1376083

George, J. S. ^[1]; Clymer, D. A. ^[2]; Turflinger, T. L. ^[1]; Mason, L. W. ^[2]; Stone, S. ^[2]; Koga, R. ^[1]; Beach, E. ^[2]; Huntington, K. ^[2]; Lauenstein, J. -M. ^[3]; Titus, J. ^[4]; Sivertz, M. ^[5]

Aerospace Corporation, El Segundo, CA (United States)
Lockheed Martin Corp., Littleton, CO (United States)
NASA Goddard Space Flight Center (GSFC), Greenbelt, MD (United States)
NAVSEA Crane, Crane, IN (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States). NASA Space Radiation Lab. (NSRL)

Single-event effects (SEE) evaluation of five different part types of next generation, commercial trench MOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage (V_DS) following a test campaign that exposed >50 samples per part type to heavy ions. These results suggest a determination of a SOA using small sample sizes may fail to capture the full extent of the part-to-part variability. An example method is discussed for establishing a Safe Operating Area using a one-sided statistical tolerance limit based on the number of test samples. Finally, burn-in is shown to be a critical factor in reducing part-to-part variation in part response. Implications for radiation qualification requirements are also explored.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Nuclear Physics (NP)

Grant/Contract Number:: SC0012704

OSTI ID:: 1376083

Report Number(s):: BNL-113823-2017-JA; R&D Project: KBCH139; 21736; KB0202011; TRN: US1702212

Journal Information:: IEEE Transactions on Nuclear Science, Vol. 64, Issue 1; ISSN 0018-9499

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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References (13)

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Optimization of the Cell Structure for Radiation-Hardened Power MOSFETs Wang, Teng; Wan, Xin; Jin, Hu Electronics, Vol. 8, Issue 6 https://doi.org/10.3390/electronics8060598	journal	May 2019

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