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Title: Sub-micrometer epsilon-near-zero electroabsorption modulators enabled by high-mobility cadmium oxide

Here, epsilon-near-zero materials provide a new path for tailoring light-matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The non-resonant modulator operates through field-effect carrier density tuning. We compare the performance of modulators composed of two different conducting oxides, namely indium oxide (In2O3) and cadmium oxide (CdO), and show that better modulation performance is achieved when using high-mobility (i.e. low-loss) epsilon-near-zero materials such as CdO. In particular, we show that non-resonant electroabsorption modulators with sub-micron lengths and greater than 5 dB extinction ratios may be achieved through the proper selection of high-mobility transparent conducting oxides, opening a path for device miniaturization and increased modulation depth.
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 1943-0655; 654886
Grant/Contract Number:
AC04-94AL85000; NA0003525
Published Article
Journal Name:
IEEE Photonics Journal (Online)
Additional Journal Information:
Journal Name: IEEE Photonics Journal (Online); Journal Volume: 9; Journal Issue: 4; Journal ID: ISSN 1943-0655
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
36 MATERIALS SCIENCE; epsilon-near-zero; sub-micrometer electroabsorption modulator; transparent conducting oxides; near-infrared; high-mobility materials; cadmium oxide