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Title: An AlN/Al0.85Ga0.15N High Electron Mobility Transistor with A Regrown Ohmic Contact.

Abstract not provided.
Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1366827
Report Number(s):
SAND2016-5836C
642225
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 74th Device Research Conference held June 19-22, 2016 in Newark, DE.
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English