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Title: Large-Area and High-Quality 2D Transition Metal Telluride

Journal Article · · Advanced Materials
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  1. Nanyang Technological Univ. (Singapore). School of Materials Science and Engineering. Centre for Programmable Materials
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy; National Inst. of Advanced Industrial Science and Technology (AIST), Tsukuba (Japan)
  3. Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics. Inst. of Physics
  4. Nanyang Technological Univ. (Singapore). Division of Physics and Applied Physics. School of Physical and Mathematical Sciences
  5. National Tsing Hua Univ., Hsinchu (Taiwan). Dept. of Physics
  6. National Univ. of Singapore (Singapore). Centre for Advanced 2D Materials. Graphene Research Centre. Dept. of Physics
  7. National Tsing Hua Univ., Hsinchu (Taiwan). Dept. of Physics; Academia Sinica, Taipei (Taiwan). Inst. of Physics
  8. Nanyang Technological Univ. (Singapore). School of Materials Science and Engineering. Centre for Programmable Materials. Division of Physics and Applied Physics. School of Physical and Mathematical Sciences. Centre for Disruptive Photonic Technologies
  9. Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics. Inst. of Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China)
  10. National Inst. of Advanced Industrial Science and Technology (AIST), Tsukuba (Japan)
  11. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  12. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy
  13. Nanyang Technological Univ. (Singapore). School of Materials Science and Engineering. Centre for Programmable Materials. Centre for Micro-/Nano-electronics (NOVITAS). School of Electrical and Electronic Engineering

Large-area and high-quality 2D transition metal tellurides are synthesized by the chemical vapor deposition method. The as-grown WTe2 maintains two different stacking sequences in the bilayer, where the atomic structure of the stacking boundary is revealed by scanning transmission electron microscopy. The low-temperature transport measurements reveal a novel semimetal-to-insulator transition in WTe2 layers and an enhanced superconductivity in few-layer MoTe2.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States); Nanyang Technological Univ. (Singapore); Chinese Academy of Sciences (CAS), Beijing (China); National Tsing Hua Univ., Hsinchu (Taiwan); National Inst. of Advanced Industrial Science and Technology (AIST), Tsukuba (Japan); Vanderbilt Univiversity, Nashville, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Singapore National Research Foundation (NRF) (Singapore); Nanyang Technological Univ. (Singapore); Ministry of Education (Singapore); Japan Science and Technology Agency (JST) (Japan); Ministry of Science and Technology (Taiwan); National Tsing Hua Univ. (Taiwan); Academia Sinica (Taiwan); National Basic Research Program of China; National Natural Science Foundation of China (NSFC)
Contributing Organization:
Collaborative Innovation Center of Quantum Matter, Beijing (China); National Univ. of Singapore (Singapore)
Grant/Contract Number:
FG02-09ER46554; AC02-05CH11231; NRF-RF2013-08; NRF-NRFF2013-03; M4081137.070; MOE2015-T2-2-007; RG164/15; 2014CB920904; 2013CB921702; 11174340; 91421303
OSTI ID:
1362252
Alternate ID(s):
OSTI ID: 1597809
Journal Information:
Advanced Materials, Vol. 29, Issue 3; ISSN 0935-9648
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 157 works
Citation information provided by
Web of Science

References (35)

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide journal May 2013
A combined experimental and theoretical study of the structural, electronic and vibrational properties of bulk and few-layer Td-WTe 2 journal June 2015
Large-Area Synthesis of Monolayer and Few-Layer MoSe 2 Films on SiO 2 Substrates journal April 2014
Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers journal June 2013
Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils journal October 2015
Enhanced superconductivity in atomically thin TaS2 journal March 2016
Type-II Weyl semimetals journal November 2015
Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface journal July 2015
Thermodynamic properties of tungsten ditelluride (WTe2) II. Standard molar enthalpy of formation at the temperature 298.15 K journal June 1992
Vertical and in-plane heterostructures from WS2/MoS2 monolayers journal September 2014
Thermodynamic properties of tungsten ditelluride (WTe2) I. The preparation and lowtemperature heat capacity at temperatures from 6 K to 326 K journal June 1992
Bandgap opening in few-layered monoclinic MoTe2 journal May 2015
Large-area high-quality 2D ultrathin Mo2C superconducting crystals journal August 2015
Twinning and Twisting of Tri- and Bilayer Graphene journal February 2012
Prediction of an arc-tunable Weyl Fermion metallic state in MoxW1−xTe2 journal February 2016
Monolayer Single-Crystal 1T′-MoTe 2 Grown by Chemical Vapor Deposition Exhibits Weak Antilocalization Effect journal June 2016
Tuning magnetotransport in a compensated semimetal at the atomic scale journal November 2015
Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu–Ni alloys journal November 2015
Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2 journal April 2014
Raman fingerprint for semi-metal WTe2 evolving from bulk to monolayer journal January 2016
Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe 2 journal September 2015
Quantum spin Hall effect in two-dimensional transition metal dichalcogenides journal November 2014
Prediction of Weyl semimetal in orthorhombic MoTe 2 journal October 2015
Phase patterning for ohmic homojunction contact in MoTe2 journal August 2015
Superconductivity emerging from a suppressed large magnetoresistant state in tungsten ditelluride journal July 2015
Phase stability and Raman vibration of the molybdenum ditelluride (MoTe 2 ) monolayer journal January 2015
Superconductivity in Weyl semimetal candidate MoTe2 journal March 2016
Anomalous Raman scattering and lattice dynamics in mono- and few-layer WTe 2 journal January 2016
Large-Area Synthesis of Highly Crystalline WSe 2 Monolayers and Device Applications journal December 2013
Enhanced electron coherence in atomically thin Nb3SiTe6 journal May 2015
Phase-Engineered Synthesis of Centimeter-Scale 1T′- and 2H-Molybdenum Ditelluride Thin Films journal May 2015
Vacancy-Induced Formation and Growth of Inversion Domains in Transition-Metal Dichalcogenide Monolayer journal April 2015
Rapid and Nondestructive Identification of Polytypism and Stacking Sequences in Few-Layer Molybdenum Diselenide by Raman Spectroscopy journal July 2015
Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors journal August 2014
Large, non-saturating magnetoresistance in WTe2 journal September 2014

Cited By (2)

Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction journal January 2020
Observation of Coulomb gap in the quantum spin Hall candidate single-layer 1T'-WTe$_2$ text January 2017

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