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Title: Electronic and magnetic properties of T i 4 O 7 predicted by self-interaction-corrected density functional theory

Understanding electronic properties of substoichiometric phases of titanium oxide such as Magneli phase Ti 4O 7 is crucial in designing and modeling resistive switching devices. Here we present our study on Magneli phase Ti 4O 7 together with rutile TiO 2 and Ti 2O 3 using density functional theory methods with atomic-orbital-based self-interaction correction (ASIC). We predict a new antiferromagnetic (AF) ground state in the low temperature (LT) phase, and we explain energy difference with a competing AF state using a Heisenberg model. The predicted energy ordering of these states in the LT phase is calculated to be robust in a wide range of modeled isotropic strain. We have also investigated the dependence of the electronic structures of the Ti-O phases on stoichiometry. The splitting of titanium t 2g orbitals is enhanced with increasing oxygen deficiency as Ti-O is reduced. Furthermore, the electronic properties of all these phases can be reasonably well described by applying ASIC with a "standard" value for transition metal oxides of the empirical parameter alpha of 0.5 representing the magnitude of the applied self-interaction correction.
 [1] ;  [2] ;  [1] ;  [3]
  1. Argonne National Lab. (ANL), Lemont, IL (United States)
  2. Trinity College, Dublin (Ireland)
  3. Argonne National Lab. (ANL), Lemont, IL (United States); Northwestern Univ., Evanston, IL (United States)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 91; Journal Issue: 11; Journal ID: ISSN 1098-0121
American Physical Society (APS)
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Materials Sciences and Engineering Division; Argonne National Laboratory, Argonne Leadership Computing Facility
Country of Publication:
United States