An InGaSb p-channel FinFET.
Conference
·
OSTI ID:1347484
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1347484
- Report Number(s):
- SAND2016-2294C; 621955
- Resource Relation:
- Conference: Proposed for presentation at the 2015 IEEE International Electron Devices Meeting held December 7-9, 2015 in Washington, DC.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Excited States and Valley Effects in a Negatively Charged Donor in a Si FinFET.
Evidence of Interface build-up in irradiated 14nm Bulk FinFET Technologies.
Heavy Ion Displacement Damage Effects in 14nm-Process FinFETs.
Conference
·
Sun Aug 01 00:00:00 EDT 2010
·
OSTI ID:1347484
+3 more
Evidence of Interface build-up in irradiated 14nm Bulk FinFET Technologies.
Conference
·
Sat Feb 01 00:00:00 EST 2020
·
OSTI ID:1347484
+2 more
Heavy Ion Displacement Damage Effects in 14nm-Process FinFETs.
Conference
·
Sat Feb 01 00:00:00 EST 2020
·
OSTI ID:1347484
+7 more