Device Engineering Towards Improved Tin Sulfide Solar Cell Performance and Performance Reproducibility

Conference · Mon Nov 21 00:00:00 EST 2016

DOI:https://doi.org/10.1109/PVSC.2016.7749872· OSTI ID:1344210

Steinmann, Vera; Chakraborty, Rupak; Rekemeyer, Paul; Siol, Sebastian; Martinot, Loic; Polizzotti, Alex; Yang, Chuanxi; Hartman, Katy; Gradecak, Silvija; Zakutayev, Andriy; Gordon, Roy G.; Buonassisi, Tonio

As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to rapidly test promising candidates in high-performing PV devices. There is a need to engineer new compatible device architectures, including the development of novel transparent conductive oxides and buffer layers. Here, we consider the two approaches of a substrate-style and a superstrate-style device architecture for novel thin-film solar cells. We use tin sulfide as a test absorber material. Upon device engineering, we demonstrate new approaches to improve device performance and performance reproducibility.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1344210
• Report Number(s): NREL/CP-5K00-67985
• Resource Relation: Conference: Presented at the 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 5-10 June 2016, Portland, Oregon
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
solar energy
thin film devices
tin sulfide